Test circuit for inductive load switching and diode recovery times. Ordering information see general marking information in the device marking section on page 14 of this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Electronic manufacturer, part no, datasheet, electronics description.
Utc, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Maxim guarantees that these switches will not latch up if the power supplies are disconnected with input signals still connected. Datasheet the dg408 single 8channel, and dg409 differential 4channel monolithic cmos analog multiplexers are dropin replacements for the popular dg508a and dg509a series devices. Test circuits and waveforms vo vs on v logic switch v v logic 1 in d. They include four independent single pole single throw spst analog switches and ttl and cmos compatible digital inputs. Vdss 600 v cs4n60f a9tdy, the silicon nchannel id 4 a pdtc25. Bss84 pchannel enhancement mode vertical dmos transistor. Datasheet the dg401 and dg403 monolithic cmos analog switches have ttl and cmos compatible digital inputs. They each include an array of sixteen analog switches, a ttl and cmos compatible digital decode circuit for channel selection, a voltage reference for logic. Drain current limited by maximum junction temperature. Quad spst cmos analog switches vishay intertechnology.
Cmos, monolithic analog switches now feature guaranteed onresistance matching 3. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Both devices have guaranteed breakbeforemake switching. They include four independent single pole single throw spst analog switches, ttl and cmos compatible digital inputs, and a voltage reference for logic. These switches conduct equally well in either direction and guarantee low charge injection, low power consumption, and an esd tolerance of 2000v minimum per method 3015. The utc 4n60 is a high voltage mosfet and is designed to. Fan301 mosfet 4n65 fan301hl 4n65 fr 300f diode cs 4n65 dg. Dual monolithic spsr cmos analog switch logic o vo test vo logic input tr datasheet. Limiting values 1 device mounted on an fr4 printedcircuit board pcb.
Dg444, dg445 monolithic, quad spst, cmos analog switches datasheet the dg444 and dg445 monolithic cmos analog switches are dropin replacements for the popular dg211 and dg212 series devices. These switches feature low analog on resistance data sheet. Cd datasheet, cd quad clocked d latch datasheet, buy cd order number cdb. Sourcedrain diode symbol parameter test conditions min. The utc 4n60 is a high voltage power mosfet and is. Dg441, dg442 monolithic, quad spst, cmos analog switches datasheet the dg441 and dg442 monolithic cmos analog switches are dropin replacements for the popular dg201a and dg202 series devices. Silicon nchannel power mosfet r cs4n60f a9tdy general description. Pulse width limited by maximum junction temperature. Typical characteristicsbeijing estek electronics co. G40n60 datasheet pdf ultrafast igbt fairchild, g40n60 datasheet, g40n60 pdf, pinout, equivalent, data, circuit, output, ic, schematic, manual, parts.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. Revised october the cdb types are supplied in lead hermetic dualinline. The dg202dg212 are similar to the dg201dg211 except for inverted control. Unisonic technologies, 4n60, 4 amps, 600 volts nchannel power mosfet. Semiconductor 4n60 series rroohhss nell high power products nchannel power mosfet 4a, 600volts. Description the utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high rugged avalanche characteristics. Utc, alldatasheet, datasheet, datasheet search site for. Unit isd 1 sourcedrain current 18 a isdm 2 sourcedrain current pulsed 72 a vsd 3 forward on voltage isd 18 a, vgs 0 v 1. Guaranteed by design, not subject to production test.
G80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance and have a high. G80n60 datasheet vces 660v, ultrafast igbt fairchild. Off isolation 20 log vsvd, vs input to off switch, vd output. Highspeed switching diodes, encapsulated in small surfacemounted device smd plastic packages. Electrical characteristics tc 25c unless otherwise noted. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Maxim integrated products 1 for pricing, delivery, and. They each include an array of eight analog switches, a ttlcmos compatible digital decode circuit for channel selection, a voltage reference for logic thresholds. Datasheet the dg406 and dg407 monolithic cmos analog multiplexers are dropin replacements for the popular dg506a and dg507a series devices.
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